Study of pattern area of logic circuit with tunneling field-effect transistors
نویسندگان
چکیده
منابع مشابه
L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications
In order to implement complementary logic function with L-shaped tunneling field-effect transistors (TFETs), current drivability and subthreshold swing (SS) need to be improved more. For this purpose, highk material such as hafnium dioxide (HfO2) has been used as gate dielectric rather than silicon dioxide (SiO2). The effects of device parameters on performance have been investigated and the de...
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Analysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?
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ژورنال
عنوان ژورنال: Contemporary Engineering Sciences
سال: 2013
ISSN: 1314-7641
DOI: 10.12988/ces.2013.3632